One reason for yesterday’s exploration, is to figure out a way around a flaw of the RFM12B wireless radio module.
Let me explain – the RFM12B module has a clock output, which can be used to drive a microcontroller. The idea being that you can save a crystal that way. Trouble is that this clock signal has to be present on power-up, even though it can be configured over SPI in software, because otherwise the microcontroller would never start running and hence never get a chance to re-configure the radio. A nasty case of Catch 22 (or a design error?).
In short: the radio always powers up with the crystal oscillator enabled. Even when not using that clock signal!
The problem is that an RFM12B draws about 0.6 mA in this mode, even though it can be put to sleep to draw only 0.3 µA (once running and listening to SPI commands). In the case of energy harvesting, where you normally get very tiny amounts of energy to run off, this startup hurdle can be a major stumbling block.
See my low-power supply weblog post about how hard that can be, and may need extra hardware to get fixed.
So I’m trying to find a way to keep that radio powered down until the microcontroller is running, allowing it to be put to sleep right away.
For ultra-low power use, yesterday’s PNP transistor approach is not really good enough.
This is where an interesting aspect of MOSFETs comes in: they make great power switches, because all they need is a gate voltage to turn them on or off. When on, their resistance (and hence voltage drop) is near zero, and the voltage on the gate doesn’t draw any current. Just like a water faucet doesn’t consume energy to keep water running or blocked, only to change the state – so do MOSFETs.
But many MOSFETs typically require several volts to turn them on, which we may or may not have when running at the lower limit of 1.8V of an ATmega or ATtiny. So the choice of MOSFET matters.
Just like yesterday, we’ll need a P-channel MOSFET to let us switch the power supply rail:
Note the subtly different placement of the resistor. With a PNP transistor, it was needed to limit the current through the base (which then got wasted, but that current is needed to make the transistor switch). With a MOSFET there is no current, but now we need to make sure that the MOSFET stays off until a low voltage is applied.
Except that now R can be very large. It’s basically a pull-up, and can be extremely weak, say 10 MΩ. That means that when pulled low, the leakage current will be only 0.3 µA.
The trick is to find a P-MOSFET type which can switch using a very low gate voltage, so that it can still be fully switched on. I’ve ordered a couple of types to test this out, and will report once they arrive and measurements can be made.
All in all, this is a very nice solution, though – just 2 very simple components. The main drawback is that we still need to reserve an I/O pin for this.
Tomorrow, I’ll explore a refinement which does not even need an extra I/O pin.